Hello.dr Pepper.
I have make an order in China for 2 supercapacitors 500F/2.7 V , a possibility of 3645 Joules...and 50xMOSFET IRFR3711.
In my first projet I will want to use N MOSFET in pararel , exactly 50xIRFR371 ( 93 A/20V ) in //.
Before that , I have make 3 tries Under 80/90 V with 20 IXYS 100V/100A , I make a hope on the max current 540A by MOSFET during 100µs==> it was not a good deal/solution ...no soldering...and some NMOS fused.
Then I have make others tries Under 20V, with 20x IRFP4468 in //...no succes , no soldering .
I have suspected many things the:
- dI/dt in command and in power out ...so I have put in serial an inductor of 100nH , an enought value on Spice for make a dI/dt Under 100A/µs.
-then the "-dphi/dt " ...
-then the lower resistor Under soldering ( 200µ Ohm in min , and 800µ Ohm in max ) making a hight intensity upper 5000A.
So I will make the others tries Under 2.7 V ...
My calculations in this case , seams to be more respectfull of the reality .==> a max intensity Under
4500A.
Recall:
2 V on Capacitor ,Under 0.5 m Ohm for solder ==> give 4000A max .
With 50x IRFR371 the max possibility is 50x93=
4650 A...continuousely.
The serial inductor is 22 n H...it's low enought for not eat energy , and up enougt to calm the dI/dt under 100A/µs , if I refered to ISIS Spice model .
The ESR of the supercapacitor 2x 500F in // is Under
0.1 m Ohm (if I well read ) , the r DS "on" of 50xMSFET in //= 5 mOhms/50=
0.1 m Ohm.
I hope no mistake for the next tries .
The SCR solution will be the last trie , if no succes with N MOSFET .
If somebody interested I make a photography of my prototype ...it's not a beautifull one , but if it work , correctly one day ...
Jac.