I'm trying to find a semiconductor (npn is preferred) that can handle high frequency in the range of 20khz and as much current possible in the to22 package.
I will attach a heat sink to the transistor. It will be used to drive a small high voltage transformer.
You need to describe how transistor is driven. Using a MOSFET if the interface meant for bipolar
could cause problems, and vice versa. Is it a PWM interface or simple on / off switch type of drive ?
As well type of load, inductive, resistive, and voltage rating needed, etc... Power devices have to be
chosen over a number of design criteria, not in the least SOA considerations.
You need to describe how transistor is driven. Using a MOSFET if the interface meant for bipolar
could cause problems, and vice versa. Is it a PWM interface or simple on / off switch type of drive ?
As well type of load, inductive, resistive, and voltage rating needed, etc... Power devices have to be
chosen over a number of design criteria, not in the least SOA considerations.
I need two for an astable multi oscillator type circuit. The transistors (or mosfets) will be used as simple switches. I hope that answers your question.
I need two for an astable multi oscillator type circuit. The transistors (or mosfets) will be used as simple switches. I hope that answers your question.
Those crude multi-vibrator circuits are generally pretty crap, very inefficient, and need much larger heat sinks because of it. They are also renowned for their unreliability, as the 'design' is so poor.
Those crude multi-vibrator circuits are generally pretty crap, very inefficient, and need much larger heat sinks because of it. They are also renowned for their unreliability, as the 'design' is so poor.