I know sir now I will be irritating you but these are the last points I want to clarify/understand 3 doubts.
1.
We say that forward bias voltage lowers the potential barrier at depletion region (which I understood clearly),but what I understanding from the answers you have given that after lowering the potential diffusion phenomenon happening .But I also studied that
==>> If we apply V voltage in forward
potential energy will be transformed into kinetic energy
qV = 1/2[mv^2]
v = (2qV/m)^1/2
So the electrons and holes reach the depletion region ,actually will cross the depletion region .So here by this concept we can see that
external electric field (battery V volt) moving the electrons still you are saying that diffusion is in the action . Which one is true (little explanation will be helpful)?
2. I understood the concept of drift current in
no bias and reverse bias condition but there is any drift current in forward bias?. If yes then there should be some internal electric field in the diode which is forcing carriers in reverse of applied external electric field which I think can't happen in forward bias.
3. I understood that the drift current should depend on temperature because this current is due to minority carriers . (Increase in temperature increases the no of electron-hole pair) .But actually these carriers are also charges (this sounds stupid I know) so these charges should be affected by the externally applied voltage (electric field) according the point no. 2 I have mentioned above (If that point was correct ).
I will be very very thankful to you if you clear my doubts .
THANK YOU