THis isn't exactly for ESD (I'm not too worried about ESD). THis is more for additional flyback protection of some MOSFETs, so the transient voltage isn't due to ESD but due to inductive spikes in the wire- I was a trying to extrapolate what to do from this ESD article but didn't quite understand it.
So for inductive spikes I'm going to place it as close as possible to the component since decaying current in the wire between the FET and TVS diode. The reason being that, unlike ESD, the wire inductance between FET and TVS diode will not filter out the spike, but just becomes a unsupressed source for the spike.