notforjoke
New Member
transistor Name: 2N539
Material of transistor: Ge
Structure of transistor: pnp
Maximum collector power dissipation (Pc): 34W
Maximum collector-base voltage (Ucb): 80V
Maximum collector-emitter voltage (Uce): 55V
Maximum emitter-base voltage (Ueb): 28V
Maximum collector current (Ic max): 3.5A
Maximum junction temperature (Tj): 85�C
Transition frequency (ft): 200KHz
Collector capacitance (Cc), Pf: -
Forward current transfer ratio (hFE), min/max: 30/75
Manufacturer of 2N539 transistor: AMP
Case of 2N539 transistor: TO10
Application of 2N539 transistor: High Power, High Voltage, General Purpose..
this is my transistor parameters.. now i can't buy that transistor because GE transistor are become very rare.. so i need a silicon transistor or mosfet which suits for my data above.. please mail me to vels.pers@gmail.com
Material of transistor: Ge
Structure of transistor: pnp
Maximum collector power dissipation (Pc): 34W
Maximum collector-base voltage (Ucb): 80V
Maximum collector-emitter voltage (Uce): 55V
Maximum emitter-base voltage (Ueb): 28V
Maximum collector current (Ic max): 3.5A
Maximum junction temperature (Tj): 85�C
Transition frequency (ft): 200KHz
Collector capacitance (Cc), Pf: -
Forward current transfer ratio (hFE), min/max: 30/75
Manufacturer of 2N539 transistor: AMP
Case of 2N539 transistor: TO10
Application of 2N539 transistor: High Power, High Voltage, General Purpose..
this is my transistor parameters.. now i can't buy that transistor because GE transistor are become very rare.. so i need a silicon transistor or mosfet which suits for my data above.. please mail me to vels.pers@gmail.com