Per the datasheets, the IRF540 can have a total gate capacitance of ~70nC and needs a Vgs of 10V for its minimum 0.077 Ohm Rdson. The IR2104 can source only 130mA, which means it will take about 70nC*10V/0.13A = ~5.4 microseconds to charge the gate capacitance up to 10V to turn the FET on fully. However, the dead time provided by the IR2104 is only ~500nS, so it is likely there will be considerable current shoot-through between Q2 and Q3.
I think you need a gate driver with a much higher current rating and/or a MOSFET with a much lower gate charge. The IRF540 also has a rather high Rdson by modern standards, implying a large heatsink is needed for significant power handling.