NTE236
Silicon NPN Transistor
Final RF Power Output
(PO = 16W, 27MHz, SSB)
Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF
band mobile radio applications.
Features:
High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
Ability to Withstand Infinite VSWR Load when Operated at:
VCC = 16V, PO = 20W, f = 27MHz
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF band
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PC
TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W
TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter−Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 − − V
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ 25 − − V
Collector Cutoff Current ICBO VCB = 30V, IE = 0 − − 100 μA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 100 μA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180 −
Output Power PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 − W
Collector Efficiency hC VCC = 12V, Pin = 1W, f = 27MHz 60 70 − %