All Power FETs (which are not sold as Logic-Level FETs) , be they N or P, require a gate drive of ≥10V. N-Fets turn on when the Gate is 10V more positive than the source; P-fets turn on when the gate is 10V more negative than the source.
That is a very poor H-Bridge circuit. The author that posted it is very naive. To turn on either the N-Fet or the P-Fet, the current required to charge the gate capacitance must come through the 10K resistor. The 10K and the gate capacitance forms an RC filter where it takes several ms for the device to turn on, during which time the FETs are Dissipating up to a tens to hundreds of Watts.
To rapidly turn on/off the Fets, which is what you want to do to minimize their power dissipation, the gate driver circuits must be capable of sourcing/sinking up to a good fraction of an Amp. The whimpy 10K resistor can only source a max of 12/10K = 1.2mA. The gate is discharged through the 100Ω resistor, which can sink 11/100, about 0.1A, which is better, but still falls short.
This is why an IC H-Bridge gate driver interface chip is a good idea.