Hi,
In a half bridge configuration what would prevent using Low side Mosfet
drivers with P-Mos transistors placed on the high side ?
A 12V power supply is used and in that case the Gate-Source voltage will always stay below the usual 20V maximum.
Thanks in advance for any help
In a half bridge configuration what would prevent using Low side Mosfet
drivers with P-Mos transistors placed on the high side ?
A 12V power supply is used and in that case the Gate-Source voltage will always stay below the usual 20V maximum.
Thanks in advance for any help