Looks right. Not sure what you are using it for but you want fast-recovery or schotky diodes in reverse-parallel with the MOSFET source-drain to protect them from inductive flyback if you are switching an inductive load.
the gate thresholds would cause both fets to be partially on during crossover unless appropriate isolated gate drivers are used.....a high side PNP bipolar transistor can be used with an N Mos transistor to ground with base and gate tied together