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Good point. A PNP emitter follower is probably the best choice, for a couple of reasons:It may be obvious, but it should be noted that any load on the C capacitor node will affect the waveform. You will likely need to add a buffer, such as an emitter follower, to that node before you connect it to any other external circuitry.
Good point. A PNP emitter follower is probably the best choice, for a couple of reasons:
1. There is a lttle headroom for a current source to bias it, which can't be said or an NPN.
2. A PNP can better handle the high current demand of the fast negative transition acting on a capacitive load.
If you can't get a 2N5771 try a 2N3906. Sim shows it works nearly as well.
I think you can deduce from this that there is little demand for a high speed, low current saturating PNP.Thanks, I was thinking the same thing. I really was asking on the 2N5771 because it seems as it is the only PNP high speed saturated switching in existence <--- This is odd, normally manufacturers will provide an equivalent.
Thank you,
-Steve.
Which is a shame. I wonder why? Presumably you can slap a zener across the b-e junction to give a similar effect in a sim, though how valid that would be over a wide frequency range is uncertain.Base-emitter breakdown is not modeled in spice on any transistor that I have seen.
Zeners have too much capacitance.Which is a shame. I wonder why? Presumably you can slap a zener across the b-e junction to give a similar effect in a sim, though how valid that would be over a wide frequency range is uncertain.
*
.subckt 2N3906bd 1 2 3
Q1 1 2 3 0 2N3906
D1 2 3 IdealZener6V
.model D D
.lib C:\Program Files\LTC\SwCADIII\lib\cmp\standard.dio
.model NPN NPN
.model PNP PNP
.lib C:\Program Files\LTC\SwCADIII\lib\cmp\standard.bjt
.model IdealZener6V D (Ron=10 Roff=1e12 Vfwd=6)
.ends
Which transistor and when is the reverse base-emitter voltage high enough to cause breakdown?...........................
EDIT: You will probably find that base-emitter breakdown of the PNP will screw up the linearity of your ramp. Base-emitter breakdown is not modeled in spice on any transistor that I have seen.
In the simulation, the Q6 base voltage rises faster than the emitter. The breakdown occurs for about 60nS, beginning right after the ramp starts.Which transistor and when is the reverse base-emitter voltage high enough to cause breakdown?![]()
Q1 is the emitter follower. Q2 is a current source, providing a total of 4mA to the emitter follower and the load. Note that the current through the load capacitor is high (I=C*dv/dt) during the fast ramp reset. The PNP emitter follower sinks this current.Roff, can you please explain why you chose to use that configuration of emitter follower? I mean the two PNP BJTs (Q1 & Q2) configured as shown on the image.
Q2 is being directly biased by the R10 10K resistor, also I see that C3 100nF has been added. Also, you are simulating the Rload and Cload as if they were actual loads, correct?
Regards,
-Steve.
You're welcome.@Roff
Thanks for the breakdown model.
It is even more important to linearity when the base voltage is a ramp generated by a constant current charging a capacitor. A resistive load on the emitter follower contributes to ramp nonlinearity on the capacitor. A resistor used for emitter bias would make that even worse.using a current source for the load on Q1 makes the output more linear. this is the same "design trick" used inside op amps to improve linearity (before feedback is applied). with just a resistor as a load, the current in the output circuit would change, and make the output nonlinear. not as badly as if it were a common emitter amp. current sources are more often used as active loads for common emitter amps.