Merry Christmas everyone!
So let's see if I've been following along correctly.
Let's say I wanted to stick with the 5V gate level even though I have 20V
right there because I'm stubborn or something. An onsemi
FDD7N25LZTM (
datasheet) has these specs:
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id): 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
It looks like this would comfortably meet all my requirements if I drive it with 5V and 250µA. And that 250µA is only used when the gate is switching (so it's not like I'm burning 1.25W continuously) but the larger the current available, the faster the MOSFET can switch, which keeps it cool.
If I use a large enough inductor, could I get away with a high-voltage transistor instead of a MOSFET? Something like a MPSA42 has the voltage range, and a 5mH inductor should keep the peak current under 500mA if my on duration is under 125µs. That feels theoretically possible, but awfully easy to overload.