Hi all
I have a very fundamental problem that I can't figure out. I am designing a Common Emitter amplifier which is to be used at about 150MHz. The S-parameter data I have suggests that if I run the transistor with Vce = 3V and Ic = 10mA, I should get a gain of about 20dB.
But designing a bias network to achieve this Vce and Ic I end up with an Rc/Re ratio of about 1.18. And from what I have read, the gain of a CE amplifier is the negative of this ratio.
So howcome there is this massive difference?
Thanks in advance!
I have a very fundamental problem that I can't figure out. I am designing a Common Emitter amplifier which is to be used at about 150MHz. The S-parameter data I have suggests that if I run the transistor with Vce = 3V and Ic = 10mA, I should get a gain of about 20dB.
But designing a bias network to achieve this Vce and Ic I end up with an Rc/Re ratio of about 1.18. And from what I have read, the gain of a CE amplifier is the negative of this ratio.
So howcome there is this massive difference?
Thanks in advance!