Several posts ago, you asked me to validate what experience I had.
I can't find that- can you quote John?
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Several posts ago, you asked me to validate what experience I had.
I have learned with my experiment's I can run 10 amps through the mosfet and it stays room temperature for hours. If I increased the load so current goes up 1 amp each time there is a time where the mosfet started to become warm. As the load increases the mosfet gets hotter and hotter. Easy time the load increases by 1 amp it takes several minutes for the temperature to increase and stabilize. At about 120 degrees F the mosfet can run like that for hours. When the mosfet temperature gets up in the 140 degree range even if the amp load remains the same the mosfet continues getting hotter and hotter and soon it will burn up. There is a place where the mosfet heat is not able to transfer to the heat sink fast enough to keep the mosfet cool.
I know transistors cases use to be epoxy, I'm not sure if they still are or if they are some type plastic these days. Either way the case material has a very low heat transfer rate compared to the tab. The case actually has an insulating effect that holds in the heat, the tab is hotter than the case. If a mosfet sets for 3 minutes the case will soon warm up to the same temperature as the tab and heat sink.
Heat sinks have hot spots. A hot mosfet cools faster when attached to a thick metal heat sink. Thin meter heat sinks get hot at the mosfets area because the heat can not transfer away from the mosfet fast enough. A 3 lbs solid block of aluminum makes a very good fast acting heat sink compared to a 10 time larger aluminum heat sink with cooling fins with fan. For high duty cycle you must have cooling fins, the best of both worlds is to attach a large block of aluminum to a large surface area heat sink with fins with fan. This is good for experimenting but not necessary for the correct mosfet amp load.
I have learned the mosfet I am experimenting with can handle 37 amp but not 38 amps. I can turn the amps up slow or fast the mosfet still can not do 38 amps even from a cold start with a mosfet temperature of 70 degrees F. I have decided the mosfet maximum current limit much be 37 amps but it can not do 37 amps for more than about 1 minute 30 seconds. After reading the link above I now understand what is happening. There is a happy amp load the mosfet likes before is starts over heating and I need to find that amp load and stay below that limit. If the amp load turnes out to be 15 amps then I should be able to put enough mosfets in parallel so they all run at about 12 amps then it should be able to run all day and never over heat the mosfet or the heat sink.
Also if I stay in the safe zone there is no need to have .1 ohm current limiting resistors on pin 3.
Hi Keep,
I'm having to duck bullets left right and centre here on ETO. Can you explain what you post means? I have looked at it upside down sidways and back to front and I just can't figure it.
chuck
Conductivity is in units of Siemens and is defined as S=1/R or the reciprocal of resistance.
So, their might be an ambiguity between "conducts more" and "conductivity".
Quote
https://en.wikipedia.org/wiki/Thermal_runaway
Bipolar junction transistors (BJTs)
Leakage current increases significantly in bipolar transistors (especially germanium-based bipolar transistors) as they increase in temperature. Depending on the design of the circuit, this increase in leakage current can increase the current flowing through a transistor and thus the power dissipation, causing a further increase in collector-to-emitter leakage current. This is frequently seen in a push–pull stage of a class AB amplifier. If the pull-up and pull-down transistors are biased to have minimal crossover distortion at room temperature, and the biasing is not temperature-compensated, then as the temperature rises both transistors will be increasingly biased on, causing current and power to further increase, and eventually destroying one or both devices.
Different mechanisms may be at play in a BJT vs a MOSFET.
Just dotting i's and crossing t's. (the lower case i's)
Measured the properties of way too many as deposited silicon films. Particulary conductance vs temperature. Conductanc(1/R) is ALWAYS higher (e.g. 1e-9 S) at room temperature. Goal was to measure activation energy, conductance at room temp and high temp (200 C) ) e.g. 1e-6 S ( 1E+6 ohms)
I can't remember actual numbers.