Wow, lotta hatred for FET's 'round yonder.
Don't read the columns of the data sheet to find out if a FET is useable in your app, lots of app notes don't tell you a whole lot in the column section. You HAVE to look at the curves. Specifically, Id vs Vds @ a particular Vgs. I've used FET's that turn on HARD by only 3V Vgs. Their on resistance at that point is mere milliohms.
Here's a great example. It's a 20V, 23 amp n-channel MOSFET in a little SOIC8 package:
**broken link removed**
Click on the data sheet and look at Figure 1 on Page 3. With a mere 1.8V Vgs level, you can almost max out the current capability of the FET losing a mere 100-150 millivolts across it. That's about 5 milliohms on resistance, at a 1.8Vgs gate drive level.
Problem is you pay for it. To get performance like this, you generally have to look for FET's with a lower maximum allowable Vds. You're also likely to only find them in smaller packages if not in surface mount only packages. Gate capacitance can be big too.
But IMO, FET's are usually the better device to use in pure switching applications like H-bridges.