Hi spec et al, I have not used 74AHCxx but I see they are faster and slightly slower ESR and of course this is depends on Vdd. , worst case, best and typ vs temp.
But at room temp 4.5V Zol = 50 Ohms and at 3V Zol= 100 Ohms by design with Zoh slightly higher.
This Zol is voltage rise with rated current for Vol and voltage drop from Vdd for test current for Zoh
As consistent with all 50 to 70 CMOS families since the early CD3xxx days Zout drops as the Vdd max drops which means more current for "Advanced " meaning designed for lower voltages" Of course Zout increases with Vdd but so does self heating at f max.
The lowest Zout I have seen is ARM's "ALC2xxx" type with 22 Ohms. Each newer generation of CMOS uses smaller lithography, lower Vdd range, lower RdsOn and lower dynamic current with faster speed giving lower Pd at same f for dynamic losses and lower pF input capacitance.
The dynamic losses are due to RdsOn * C load*f^2 for RC rise time and f transitions per second since f is linear but power is I^2ESR or RdsOn
But at room temp 4.5V Zol = 50 Ohms and at 3V Zol= 100 Ohms by design with Zoh slightly higher.
This Zol is voltage rise with rated current for Vol and voltage drop from Vdd for test current for Zoh
As consistent with all 50 to 70 CMOS families since the early CD3xxx days Zout drops as the Vdd max drops which means more current for "Advanced " meaning designed for lower voltages" Of course Zout increases with Vdd but so does self heating at f max.
The lowest Zout I have seen is ARM's "ALC2xxx" type with 22 Ohms. Each newer generation of CMOS uses smaller lithography, lower Vdd range, lower RdsOn and lower dynamic current with faster speed giving lower Pd at same f for dynamic losses and lower pF input capacitance.
The dynamic losses are due to RdsOn * C load*f^2 for RC rise time and f transitions per second since f is linear but power is I^2ESR or RdsOn
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