that is in the datasheet where it says Avalanche current.
note however that it cannot pass that current for very long. microseconds.
google "avalanche rated mosfets" for more
Thanks.
From the datasheet of IRFP460 Mosfet, which is a 500V 20A mosfet,
Code:
Avalanche Current
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 20 A
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 960 mJ
I can't fully grasp the concept. From the IAR rating, I guess that it can support 20A avalanche current for until the Mosfet's temperature is within limit.
That means 20A*500Volts = 10,000 watts.
Now from the second EAS rating, it says it can't give more than 960 mJ single Avalanche energy. 10,000 watts for 100 microseconds will give 1000 mj.
So, Does this means, the avalanche breakdown shouldn't last for more than ~100 useconds?
If yes, then to be consistent with IAR rating, does this also means, if it lasts more than 100 usec, the Junction Temperature will rise more than Tj Max?
Why is Vdd = 50V specified for EAS rating. Shouldn't it be Vdd = 500V?, since we are talking about avalanche current.
I have a record where I have managed to damage a IRFP460 due to overvoltages (The avalanche current was well under 20A), without its body temperature rising significantly. Can you explain this?