Hello To All,
Hope this message finds everyone well. I have the following question:
The Qg Vs. Vgs characteristic provided for many power MOSFETs is often limited to a peak Vgs of 10V and it is given for some assumed test conditions (i.e. Vds = 300, Id = 55A, & Ig = 10mA - please see link below for datasheet). That being said, my questions are:
1) How should the required gate charge be determined if the devise is to be operated at a different set of values than those assumed by the manufacturer in generating the Qg Vs. Vgs characteristic curve.
2) If a Vgs of 15V is desired (i.e. to achieve minimum Rds-on), is it acceptable to obtain the required gate charge by extrapolating the given Qg Vs. Vgs characteristic?
Thanks in advance for any assistance you may be able to provide.
Regards,
Bryan
Datasheet: **broken link removed**