I always add a gate resistor when I am using a breadboard for power fets as the wiring tends to add to the inductance causing ringing. The downside to adding resistance is that it slows down turn on/off time due to the gate capacitance. Data sheets now quote total gate charge (nC). A fet with a nC of 20 will turn on in 20 usec with 1 ma or 20 ns with 1 amp of gate drive. A lot depends on your application and your driver. Some drivers don't like the ringing. Some also spec a peak current. Below is a bit from IR on the subject.
The gate resistor in series with the output impedance of the circuit used to drive the gate in a given application, controls the switching on and off times.
MOSFET gate charge in Coulombs = I t. So if a gate driver having say 0.2A output current capability switches a particular MOSFET in 100ns and by increasing the series gate resistance it reduces the current into the gate to 0.1A, then the MOSFET will switch in 200ns.
The optimum value for Rg is very application dependant. You want the MOSFET to switch as quickly as possible to minimise switching losses, but not so fast that parasitic inductances and capacitances associated with the pcb layout and any wiring to a load, will cause high di/dt voltage spiking or ringing.If you find that an optimised value of Rg controls switch on OK but slows the turn off too much, then a fix is to place a diode across Rg with its cathode towards the gate drive circuit. This will bypass Rg during turn off thereby speeding up the turn off. Placing a resistor in series with the diode will enable you to control turn off time independantly of turn on.