gm and ro in a NewFET

[starline]

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When the NewFET is biased into its active region, how is the algebraic expression for gm and ro in terms of the large signal model parameters K and VT and the bias voltages VGS and VDS?

 

[audioguru]

This is the second thread that asks about a NewFET.
But we don't know anything about a NewFET and Google also knows nothing about it.
On your drawing its performance looks like an ordinary enhancement mode Mosfet.

 

[panic mode]

someone must be teaching NewFET as type of transistor...
see if this helps

 

[panic mode]

gm= (2*Ids)/(Vgs-Vt) = sqrt(2*K*Ids(1-lambda*Vds))

or since lambda is very small, gm is approximately:

gm=sqrt(2*K*Ids)

r0=[(1/lambda) + Vds] / Ids

or approximately

r0=Vds/Ids


note:

valid for vgs<=0.2(Vgs-Vt)

where Vt is threshold voltage of the Mosfet