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This is a common misconception for people who cut their teeth on BJTs. Saturation in a MOSFET is basically opposite of that in a BJT. In a MOSFET, saturation is the high-impedance region (active mode) of the characteristic curves.In saturation state RDS is very small.
A search finds several references to the Early effect in MOSFETs. It's a different effect, but with similar results.I know the early effect voltage (VA) is normally applied with BJT's. I don't know if it is applicable with FET's. It is actually the variation of the width of the base as the reverse voltage between collector base varies. Typically, the gate of the FET's as virtually isolated, high impedance input.
A search finds several references to the Early effect in MOSFETs. It's a different effect, but with similar results.