Hi friends;
A relatively simple question on Barrier Potential of a p-n junction diode:
The equation for the barrier potential is as follows:
Vb = Vt loge(Na*Nd/square(n)) mV
where Vt=KT/e
This equation shows that the barrier potential is directly proportional to the temperature. So as temperature increases the barrier potential should increase.
But in contradiction to this, I have found the following statement:
" With increase in temperature, more minority charge carriers are produced, leading to their increased drift across the junction. As a result, equilibrium occurs at a lower barrier potential. It is found that the Vb decreases by about 2 mV/deegre celcius. "
Please clarify the above, I will be grateful to you.
Thank you
Vaibhav
A relatively simple question on Barrier Potential of a p-n junction diode:
The equation for the barrier potential is as follows:
Vb = Vt loge(Na*Nd/square(n)) mV
where Vt=KT/e
This equation shows that the barrier potential is directly proportional to the temperature. So as temperature increases the barrier potential should increase.
But in contradiction to this, I have found the following statement:
" With increase in temperature, more minority charge carriers are produced, leading to their increased drift across the junction. As a result, equilibrium occurs at a lower barrier potential. It is found that the Vb decreases by about 2 mV/deegre celcius. "
Please clarify the above, I will be grateful to you.
Thank you
Vaibhav