gm and ro in a NewFET

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When the NewFET is biased into its active region, how is the algebraic expression for gm and ro in terms of the large signal model parameters K and VT and the bias voltages VGS and VDS?

This is the second thread that asks about a NewFET.
But we don't know anything about a NewFET and Google also knows nothing about it.
On your drawing its performance looks like an ordinary enhancement mode Mosfet.

someone must be teaching NewFET as type of transistor...
see if this helps

gm= (2*Ids)/(Vgs-Vt) = sqrt(2*K*Ids(1-lambda*Vds))

or since lambda is very small, gm is approximately:

gm=sqrt(2*K*Ids)

r0=[(1/lambda) + Vds] / Ids

or approximately

r0=Vds/Ids


note:

valid for vgs<=0.2(Vgs-Vt)

where Vt is threshold voltage of the Mosfet